JDV2S29SC 2005-11-07 1 toshiba diode silicon epitaxial planar type JDV2S29SC vco for uhf band radio ? high capacitance ratio : c 1v /c 4v = 2.8 (typ.) ? low series resistance : r s = 0.64 ohm (typ.) ? a two-terminal ultra-small package supports high-density mounting and the downsizing of end products ? lead (pb)-free. maximum ratings (ta = 25c) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit reverse voltage v r i r = 1 a 10 ? ? v reverse current i r v r = 6 v ? ? 1 na c 1v v r = 1 v, f = 1 mhz 3.54 ? 3.83 capacitance c 4v v r = 4v, f = 1 mhz 1.22 ? 1.37 pf capacitance ratio c 1v /c 4v ? 2.73 ? 2.92 ? series resistance r s v r = 1 v, f = 470 mhz ? 0.64 0.75 ? note: signal level when capacitance is measured: v sig = 100 mvrms marking unit: mm 0.620.03 0.190.02 0.30.03 0.320.03 0.38 0.190.02 0.270.02 0.0250.0 0.0250.015 ` ` 1.anode 2.cathode jedec ? jeita ? toshiba 1-1r1a ) weight: 0.00017 g (typ.) characteristic symbol rating unit reverse voltage v r 10 v junction temperature t j 150 c storage temperature range t stg -55~150 c 2 1 sc2
JDV2S29SC 2005-11-07 2 0.1 1 10 01234567 f=1mhz ta=25 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 f =470mhz ta=25 reverse voltage v r (v) c v ? v r capacitance c v (pf) reverse voltage v r (v) r s ? v r series resistance r s ( ? )
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